Published peer-reviewed international conference and journal papers

Solid-State Storage workload and throughput interaction with architecture and system design - modeling, machine-learned prognostics and robustness

 [Invited] “Enabling Prognostics of Robust Design with Interpretable Machine Learning”, Jay Sarkar and Cory Peterson, Focus Session on Reliability of Systems and Devices, 2019 International Electron Devices Meeting, San Francisco, CA, December 2019.

Accepted version - PDF

Published Version: IEEExPlore

“Operational Workload Impact on Solid-State Storage Analyzed with Interpretable Machine Learning”, Jay Sarkar and Cory Peterson, 2019 International Reliability Physics Symposium (IRPS) April 2019, pp. 3C.6-1 – 3C.6-8.

“Machine-Learned Assessment and Prediction of Robust Solid-State Storage System Reliability Physics”, Jay Sarkar, Cory Peterson and Amir Sanayei, 2018 International Reliability Physics Symposium (IRPS) March 2018, pp. 3C.6-1 – 3C.6-8.

“Robust Error-Management and Impact of Throughput in Solid State Storage – Characterization and First System Reliability Model”, Jay Sarkar, Cory Peterson, Yao Zhang and Steve Lock, 2017 Annual Reliability and Maintainability Symposium (RAMS) January 2017, pp. 1-6.

“Reliability Characterization and Modeling of Solid State Storage”, Jay Sarkar and Frank Sun, 2015 Annual Reliability and Maintainability Symposium (RAMS), January 2015, pp. 1-6.  


Phase-Change (Optane) memory fundamental physics, array statistics and materials science - physical and statistical modeling, and characterization

“Evolution of Phase Change Memory characteristics with operating cycles: electrical characterization and physical modeling”, J. Sarkar and Bob Gleixner, Applied Physics Letters 91, p. 233506, 2007

“[ Invited ] Data retention characterization of Phase-Change Memory arrays”, B. Gleixner, A. Pirovano, J. Sarkar, F. Ottogalli, E. Tortorelli, M. Tosi and R. Bez, Proceedings of 45th Annual IEEE International Reliability Physics Symposium 2007, p. 542 - 546  


3-D NAND Flash cell with (biologically) self-assembled nanocrystal floating gate - design, fabrication and characterization

“Protein-Assembled Nanocrystal-Based Vertical Flash Memory Devices with Al2O3 Integration”, F. Ferdousi, J. Sarkar, S. Tang, D. Shahrjerdi, T. Akyol, E. Tutuc, S.K. Banerjee, Journal of Electronic Materials, 38, p. 438, 2009

“Vertical Flash memory devices with protein-assembled nanocrystal floating gate and Al2O3 control oxide”, F. Ferdousi, J. Sarkar, D. Shahrjerdi, T. Akyol, J. P. Donnelly, E. Tutuc, S. K. Banerjee, 66th IEEE Device Research Conference 2008

“[ Invited ] Bio-nano approaches to fabricating quantum-dot floating gate flash memories”, S. Banerjee, Shan Tang, J. Sarkar, Davood Shahrjerdi, Chang Lee, International Conference on Solid State Devices and Materials 2007, Ibaraki, Japan

“Protein-mediated assembly of nanocrystal floating gate in a vertical flash cell”, J. Sarkar, Shan Tang, Domingo Garcia, Sanjay Banerjee, 22nd IEEE Non Volatile Semiconductor Memory Workshop 2007, p. 34 – 35

“[ Invited ] Flash memory with nanoparticle floating gate”, Sanjay Banerjee, Shan Tang, J. Sarkar, Davood Shahrjerdi, Chang Lee, Particles 2007, Toronto, Canada

“Vertical flash memory with nanocrystal floating gate for ultra-dense integration and good retention”, J. Sarkar, Sagnik Dey, Davood Shahrjerdi and Sanjay Banerjee, Electron Device Letters, 28, p. 449 – 451, 2007

“Vertical flash memory with protein-mediated assembly of nanocrystal floating gate”, J. Sarkar, Shan Tang, Davood Shahrjerdi and Sanjay Banerjee, Applied Physics Letters, 90, p. 103512, 2007 – editorially selected for the Virtual Journal of Nanoscale Science and Technology, 15, issue 11 (March 19th, 2007) and the Virtual Journal of Biological Physics Research, 13, issue 6 (March 15th, 2007)

“Vertical (3-D) flash memory with SiGe nanocrystal floating gate”, J. Sarkar, S. Dey, Y. Liu, D. Shahrjerdi, D. Q. Kelly and S. K. Banerjee, 64th IEEE Device Research Conference Digest 2006, p. 267 – 268

“Fabrication of Self-Assembled Ni Nanocrystal Flash Memories Using a Polymeric Template”, D. Shahrjerdi, J. Sarkar, X. Gao, D. Q. Kelly, S. K. Banerjee, 64th IEEE Device Research Conference Digest, p. 269 – 270, 2006

“Fabrication of Dense Ordered Arrays of Metal Dots for Flash Memory Application”, D. Shahrjerdi, J. Sarkar, S. K. Banerjee, Materials Research Society Spring Meeting, 2006

“Improved performance of SiGe nanocrystal memory with VARIOT tunnel barrier”, Y. Liu, S. Tang, S. Dey, D. Kelly, J. Sarkar, S. K. Banerjee, IEEE Transactions on Electron Devices, 53, p. 2598 – 2602, 2006

“Engineering the electromagnetic environment in a semiconductor nanostructure to study single electron tunneling oscillations”, J. Sarkar, Zhonqing Zhi, Alex Rimberg, APS Annual March Meeting, Montreal, 2004


Issued and Filed Patents

Solid-State Data Storage Systems Prognostics and Resilient, Autonomous Designs

Apparatus and Method for Regulating Available Storage of a Data Storage System US and worldwide patents filed, February 2021.

“Method and System Involving Degradation of Non-Volatile Memory Based on Write Commands and Drive-Writes” US and worldwide patents filed, July 2020

“Method and System for Host-Assisted Data Recovery Assurance for Data Center Storage Device Architectures” - Filed, January 9 2020.

“Data Storage Systems and Methods for Autonomously Adapting Data Storage System Performance, Capacity and/or Operational Requirements” - US Patent 10963332 - Issued, March 2021.

Method and System for a Storage (SSD) Drive-Level Failure and Health Prediction Leveraging Machine Learning on Internal Parametric Data - Issued, July 2020.

Phase Change (Optane) Memory

Maintenance Process to Enhance Memory Endurance - Issued, October 2011.

MEMS Display

MEMS Device Encapsulation with Corner or Edge Seals, Filed, June 2012.